CJD44H11 npn cjd45h11 pnp surface mount complementary silicon power transistors description: the central semiconductor CJD44H11, cjd45h11 types are complementary silicon power transistors manufactured in a surface mount package designed for switching and power amplifier applications. marking: full part number dpak transistor case maximum ratings: (t c =25oc unless otherwise noted) symbol units collector-emitter voltage v ceo 80 v emitter-base voltage v ebo 5.0 v continuous collector current i c 8.0 a peak collector current i cm 16 a power dissipation p d 20 w power dissipation (t a =25oc) p d 1.75 w operating and storage junction temperature t j , t stg -65 to +150 oc thermal resistance jc 6.25 oc/w thermal resistance ja 71.4 oc/w electrical characteristics: (t c =25oc unless otherwise noted) symbol test conditions min typ max units i ces v ce =80v 10 a i ebo v eb =5.0v 50 a bv ceo i c =30ma 80 v v ce(sat) i c =8.0a, i b =400ma 1.0 v v be(sat) i c =8.0a, i b =800ma 1.5 v h fe v ce =1.0v, i c =2.0a 60 h fe v ce =1.0v, i c =4.0a 40 f t v ce =10v, i c =500ma, f=20mhz (CJD44H11) 60 mhz f t v ce =10v, i c =500ma, f=20mhz (cjd45h11) 50 mhz c ob v cb =10v, i e =0, f=0.1mhz (CJD44H11) 120 pf c ob v cb =10v, i e =0, f=0.1mhz (cjd45h11) 220 pf t d + t r i c =5.0a, i b1 =500ma (CJD44H11) 320 ns t d + t r i c =5.0a, i b1 =500ma (cjd45h11) 150 ns t s i c =5.0a, i b1 =i b2 =500ma (CJD44H11, cjd45h11) 450 ns t f i c =5.0a, i b1 =i b2 =500ma (CJD44H11) 130 ns t f i c =5.0a, i b1 =i b2 =500ma (cjd45h11) 100 ns r2 (4-january 2010) www.centralsemi.com
CJD44H11 npn cjd45h11 pnp surface mount complementary silicon power transistors dpak transistor case - mechanical outline lead code: b) base c) collector e) emitter c) collector marking: full part number www.centralsemi.com r2 (4-january 2010)
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